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| SI4925BDY Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 30 FEATURES ID (A) - 7.1 - 5.5 rDS(on) (W) 0.025 @ VGS = - 10 V 0.041 @ VGS = - 4.5 V D TrenchFETr Power MOSFET D Advanced High Cell Density Process APPLICATIONS D Load Switches - Notebook PCs - Desktop PCs - Game Stations S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: SI4925BDY SI4925BDY-T1 (with Tape and Reel) 8 7 6 5 D1 D1 D2 D2 G1 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State - 30 "20 Unit V - 7.1 - 5.7 - 40 - 1.7 2.0 1.3 - 55 to 150 - 5.3 - 4.3 A - 0.9 1.1 0.7 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1 " x 1" FR4 Board. Document Number: 72001 S-31989--Rev. B, 13-Oct-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 50 85 30 Maximum 62.5 110 40 Unit _C/W C/W 1 SI4925BDY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "20 V VDS = - 30 V, VGS = 0 V VDS = - 30 V, VGS = 0 V, TJ = 55_C VDS = - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 7.1 A VGS = - 4.5 V, ID = - 5.5 A VDS = - 10 V, ID = - 7.1 A IS = - 1.7 A, VGS = 0 V - 40 0.020 0.033 20 - 0.8 - 1.2 0.025 0.041 -1 -3 "100 -1 - 25 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = - 1.7 A, di/dt = 100 A/ms VDD = - 15 V, RL = 15 W ID ^ - 1 A, VGEN = - 10 V, RG = 6 W VDS = - 15 V, VGS = - 10 V, ID = - 7.1 A 33 5.4 8.9 9 12 60 34 30 15 20 90 50 60 ns 50 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 10 thru 5 V 30 I D - Drain Current (A) 4V 20 I D - Drain Current (A) 30 40 TC = - 55_C 25_C Transfer Characteristics 20 125_C 10 3, 2 V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 10 0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 72001 S-31989--Rev. B, 13-Oct-03 SI4925BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.08 r DS(on) - On-Resistance ( W ) 2500 Capacitance 0.06 C - Capacitance (pF) 2000 Ciss 1500 0.04 VGS = 4.5 V 1000 Coss 0.02 VGS = 10 V 500 Crss 0.00 0 10 20 ID - Drain Current (A) 30 40 0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 7.1 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 7.1 A 1.4 6 r DS(on) - On-Resistance (W) (Normalized) 15 20 25 30 35 40 1.2 4 1.0 2 0.8 0 0 5 10 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.08 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) I S - Source Current (A) TJ = 150_C 0.06 ID = 3 A 0.04 ID = 7.1 A 10 TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72001 S-31989--Rev. B, 13-Oct-03 www.vishay.com 3 SI4925BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 0.6 V GS(th) Variance (V) ID = 250 mA 0.4 Power (W) 0.2 0.0 - 0.2 - 0.4 - 50 20 30 25 Single Pulse Power 15 10 5 0 10 -2 - 25 0 25 50 75 100 125 150 10 -1 1 Time (sec) 10 100 600 TJ - Temperature (_C) 100 Safe Operating Area rDS(on) Limited IDM Limited P(t) = 0.0001 10 I D - Drain Current (A) P(t) = 0.001 1 ID(on) Limited 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 1 Square Wave Pulse Duration (sec) 10 -1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 85_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72001 S-31989--Rev. B, 13-Oct-03 SI4925BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72001 S-31989--Rev. B, 13-Oct-03 www.vishay.com 5 |
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